unisonic technologies co., ltd hj44h11 npn silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r209-024.d npn epitaxial planar transistor ? description the utc hj44h11 is designed for such applications as: series, shunt and switching regulators; output and driver stages of amplifiers operating at frequenc ies from dc to greater than 1mhz; low and high frequency inverters/ converters; and many others. ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 hj44h11l-aa3-r hj44h11g-aa3-r sot-223 b c e tape reel hj44h11l-ta3-t HJ44H11G-TA3-T to-220 b c e tube hj44h11l-tn3-r hj44h11g-tn3-r to-252 b c e tape reel hj44h11l-tn3-t hj44h11g-tn3-t to-252 b c e tube
hj44h11 npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r209-024.d ? absolute maximum ratings (t a =25 ) parameter symbol ratings unit collector- emitter voltage v ceo 80 v collector-emitter voltage v ces 80 v emitter-base voltage v ebo 5 v collector current i c 8 a base current i b 5 a power dissipation (t c =25 ) sot-223 p d 5 w to-220 65 to-252 20 junction temperature t j +150 storage temperature t stg -55~+150 note: absolute maximum ratings are those values bey ond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 ) parameter symbol test conditions min typ max unit collector-emitter breakdown voltage bv ceo i c =30ma, i b =0 80 v collector-emitter breakdown voltage bv ces i c =1ma, i b =0 80 v emitter-base breakdown voltage bv ebo i e =1ma, i c =0 5 v collector cut-off current i ces v cb =80v, v eb =0 10 ua emitter cut-off current i ebo v eb =5v, i c =0 50 ua collector-emitter satura tion voltage(note) v ce ( sat ) i c =8a, i b =0.4a 1 v base-emitter saturati on voltage(note) v be ( sat ) i c =8a, i b =0.8a 1.5 v dc current gain (note) h fe1 v ce =1v, i c =2a 60 h fe2 v ce =1v, i c =4a 40 output capacitance c ob v cb =10v 130 pf transition frequency f t v ce =10v, i c =500ma, f=20mhz 50 mhz note: pulse test: pulse width 380us, duty cycle 2%
hj44h11 npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r209-024.d ? typical characteristics 100 1000 10000 10 100 1000 current gain vs. collector current collector current (ma) v ce =1v 10 100 10000 10 100 1000 saturation voltage vs. collector current collector current (ma) 1000 v ce(sat) @i c =20i b 100 1000 10000 10 1000 10000 saturation voltage vs. collector current v be(sat) @i c =10i b collector current (ma) 110100 10 100 1000 capacitance vs. reverse-biased voltage c ob reverse biased voltage (v) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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